Trinasolar has announced that its industrial larger-area n-type total passivation (TOPAS) solar cell, based on heterojunction (HJT or SHJ), has achieved 27.08% efficiency, setting a new record for front and back contact solar cells. This was confirmed by the Institute for Solar Energy Research in Hamelin, Germany. This is the first time that a crystalline silicon solar cell with front and back contact structure has achieved front-side efficiency above 27%.
The record-breaking solar cell uses the substrate of a large-area n-type phosphorus-doped Cz silicon wafer (210×105 mm2) with a high minority carrier lifetime. By integrating with optimized thin-film passivating contact, a progressive variable-frequency-RF nanocrystalline p-type emitter, advanced light trapping, and very fine line printing technologies, front-side efficiency reached 27.08% for the industrial-sized TOPAS cell.
“We are delighted with the feat our R&D team has been able to achieve,” said Gao Jifan, Chairman and CEO of Trina Solar. “Trina Solar’s dedication to its R&D efforts on total passivation solar cells and modules is stronger than ever as we continue to improve their competitiveness.”
This is another major breakthrough Trinasolar has made in the area of front and back contact solar cells, following two n-type TOPCon solar cell efficiency world records the company set in the past two months. With the 27.08% world record, Trinasolar has achieved the highest-ever levels in both high-temperature passivation contacts and low-temperature passivation contacts.
